Materials Processing in Atmospheric Pressure Glow Plasma CVD
نویسندگان
چکیده
منابع مشابه
Low-pressure CVD and Plasma- Enhanced CVD
LPCVD is a process used in the manufacturing of the deposition of thin films on semiconductors usually ranging from a few nanometers to many micrometers. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage. These films include a variety of materials including polysilicon for gate contacts, thick oxides used for isolation, doped oxides for global...
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Recently there has been considerable interest in atmospheric discharges operating in a glow discharge mode i.e. with a spatial and sheath structure similar to that of low pressure glow discharges [1,2,3]. Here spectroscopy has been used to characterise an atmospheric pressure glow discharge (APGD), operating with either dry air, argon or helium gas flowing through the inter-electrode space and ...
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Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films are synthesized by atmospheric pressure plasma enhanced chemical vapor (AP-PECVD) deposition using the Surfx Atomflow 250D APPJ source with triethylsilane (HSiEt3, TES) and nitrogen as the precursor and the reactive gases, respectively. The effect of the substrate temperature (Ts) on the growth characteristics and the properties ...
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We report the visible and UV activity of thin silver films. The films are grown using a CVD process employing aqueous-based silver precursors, flame-assisted chemical vapour deposition. This approach overcomes many of the previously encountered limitations to silver deposition by employing an atmospheric pressure process, low-cost and low-toxicity precursors. The resultant films are assessed fo...
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Graphene films were fabricated over synthesized MCM-41 nanocatalyst by chemical vapordeposition method, and the reaction was carried in atmospheric pressure at 750˚C. Acetylenegas used as a carbon precursor and the synthesis reaction took place in hydrogen atmosphere.Mesoporous MCM-41 was synthesized at room temperature, using wet chemical method. Thesynthesized metal free catalyst was characte...
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ژورنال
عنوان ژورنال: The Journal of The Institute of Electrical Engineers of Japan
سال: 2006
ISSN: 1340-5551,1881-4190
DOI: 10.1541/ieejjournal.126.788